allpix::HamburgHighField
Hamburg (Klanner-Scharf) high-field parametrization for <100> silicon. More…
#include <Mobility.hpp>
Inherits from allpix::Hamburg, allpix::MobilityModel
Public Functions
Name | |
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HamburgHighField(SensorMaterial material, double temperature) |
Additional inherited members
Public Functions inherited from allpix::Hamburg
Name | |
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Hamburg(SensorMaterial material, double temperature) | |
virtual double | operator()(const CarrierType & type, double efield_mag, double doping) const override |
Protected Attributes inherited from allpix::Hamburg
Name | |
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double | electron_mu0_ |
double | electron_vsat_ |
double | hole_mu0_ |
double | hole_param_b_ |
double | hole_param_c_ |
double | hole_E0_ |
Public Functions inherited from allpix::MobilityModel
Name | |
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MobilityModel() =default | |
virtual | ~MobilityModel() =default |
virtual double | operator()(const CarrierType & type, double efield_mag, double doping) const =0 |
Detailed Description
class allpix::HamburgHighField;
Hamburg (Klanner-Scharf) high-field parametrization for <100> silicon.
http://dx.doi.org/10.1016/j.nima.2015.07.057 This implementation takes the parameters from Table 3, suitable for electric field strengths above 2.5kV/cm. No temperature dependence is assumed on hole mobility parameter c, all other parameters are the reference values at 300K and are scaled according to Equation (6).
Public Functions Documentation
function HamburgHighField
inline explicit HamburgHighField(
SensorMaterial material,
double temperature
)
Updated on 2025-02-27 at 14:14:46 +0000