allpix::Hamburg

Hamburg (Klanner-Scharf) parametrization for <100> silicon. More…

#include <Mobility.hpp>

Inherits from allpix::MobilityModel

Inherited by allpix::HamburgHighField

Public Functions

Protected Attributes

Additional inherited members

Public Functions inherited from allpix::MobilityModel

Detailed Description

class allpix::Hamburg;

Hamburg (Klanner-Scharf) parametrization for <100> silicon.

http://dx.doi.org/10.1016/j.nima.2015.07.057 This implementation takes the parameters from Table 4. No temperature dependence is assumed on hole mobility parameter c, all other parameters are the reference values at 300K and are scaled according to Equation (6).

Public Functions Documentation

function Hamburg

inline explicit Hamburg(
    SensorMaterial material,
    double temperature
)

function operator()

inline virtual double operator()(
    const CarrierType & type,
    double efield_mag,
    double doping
) const override

Parameters:

• type Type of charge carrier (electron or hole)
• efield_mag Magnitude of the electric field
• doping (Effective) doping concentration

Return: Mobility of the charge carrier

Reimplements: allpix::MobilityModel::operator()

Function call operator to obtain mobility value for the given carrier type and electric field magnitude

Protected Attributes Documentation

variable electron_mu0_

double electron_mu0_;

variable electron_vsat_

double electron_vsat_;

variable hole_mu0_

double hole_mu0_;

variable hole_param_b_

double hole_param_b_;

variable hole_param_c_

double hole_param_c_;

variable hole_E0_

double hole_E0_;

Updated on 2025-02-27 at 14:14:46 +0000